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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE354 is a Silicon PNP Transistor manufactured by NTE Electronics, specifically designed for 12.5 Volt VHF large-signal amplifier applications. It is suitable for military and industrial equipment operating up to 250MHz.
Key electrical characteristics include a minimum DC current gain (hFE) of 15 at 500mA, an output capacitance (Cob) typically 90pF and maximum 120pF at 100kHz. The transistor provides a minimum RF power output (PO) of 15W at 175MHz with a minimum collector efficiency (η) of 55% under test conditions of 12.5V VCC and 1.9A ICmax.
Absolute maximum ratings include a collector-emitter voltage (VCEO) of 18V and a collector current (IC) of 2.5A continuous. The device features balanced emitter construction for ruggedness and a flange package for easy mounting and improved thermal conductivity to a heat sink.
This transistor is designed for applications requiring high power output and stability over temperature in the VHF frequency range.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE354 transistor provides a minimum RF power output of 15W at 175MHz.
The NTE354 transistor is designed for 12.5 Volt applications.
The NTE354 transistor comes in a flange package.
The minimum DC current gain (hFE) for the NTE354 is 15 at 500mA.
The maximum continuous collector current (IC) for the NTE354 is 2.5A.
The storage temperature range for the NTE354 is -65°C to +200°C.