| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE351 is a silicon NPN transistor manufactured by NTE Electronics, Inc. It is designed for use in 12.5V VHF large-signal power amplifier applications within commercial and industrial equipment, operating up to 300MHz.
Key electrical specifications include an output power of 25W, a minimum gain of 6.2dB, and an efficiency of 65%. The transistor has a collector-emitter voltage (VCEO) of 18V and a collector-emitter voltage (VCES) of 36V. The maximum continuous collector current (IC) is 5A.
This component is housed in a T72H package. It has a total device dissipation (PD) of 65W at 25°C, with a derating of 370mW/°C above this temperature. The storage temperature range is specified from -65°C to +200°C.
This part is noted as New Old Stock (NOS) and is no longer available for export.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The output power of the NTE351 transistor is 25W.
The minimum gain for the NTE351 transistor is 6.2dB.
The efficiency of the NTE351 transistor is 65%.
The maximum collector-emitter voltage (VCEO) for the NTE351 is 18V.
The maximum continuous collector current for the NTE351 is 5A.
The storage temperature range for the NTE351 transistor is –65°C to +200°C.
The NTE351 transistor is designed for use up to 300MHz.