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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE350F is a silicon NPN planar transistor manufactured by NTE Electronics. This component is designed for RF applications, specifically as a BJT (Bipolar Junction Transistor) with NPN characteristics.
Key electrical specifications include a voltage rating of 18V and a current handling capability of 2.5A. The power dissipation is rated at 31000mW, indicating its capacity for handling significant power in RF circuits. The operating temperature range is broad, spanning from -65℃ to 200℃, making it suitable for demanding environments.
Mechanically, the NTE350F is housed in a T-72H package and features 4 pins. The dimensions include a height of 6.5mm. This transistor is suitable for various VHF communications and military/commercial equipment applications where robust performance is required.
While the RoHS status is listed as Non-Compliant and MSL is 1, further verification of compliance documentation is recommended.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE350F has a voltage rating of 18V.
The NTE350F is packaged in a T-72H package with 4 pins.
The NTE350F operates from -65°C to 200°C.
The NTE350F has a maximum power dissipation of 31,000 mW (31 W).
The NTE350F has an output power of 15 W.
The NTE350F has a current rating of 2.5 A.
Yes, the NTE350F has cross-reference parts including NTE350, NTE320, and NTE345 from the same manufacturer.