| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE350 is an NPN RF BJT transistor manufactured by NTE Electronics. This component is designed for various electronic applications requiring specific voltage and current characteristics. It operates with a maximum voltage of 18V and a maximum current of 2.5A. The power dissipation is rated at 31000mW, indicating its capability for handling moderate power levels.
The transistor is housed in a T-72H case and has 4 pins. It is constructed from silicon material and is specified for an operating temperature range of -65℃ to 200℃. The product lifecycle status is active, signifying its current availability for use in new designs.
This transistor is suitable for applications where its electrical and thermal specifications meet the design requirements. Its silicon material and operating temperature range suggest reliability in various environmental conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE350 uses a T-72H package with 4 pins.
The component operates between -65℃ and 200℃.
The NTE350 provides 15W of output power.
The device has a power dissipation of 31000 mW.
The semiconductor is constructed from silicon.
The rated operating voltage is 18V.
The component supports a current of 2.5A.