| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Thermal Resistance |
The NTE334 from NTE Electronics is a silicon NPN transistor specifically engineered for power amplifier applications. It is suitable for use in industrial, commercial, and amateur radio equipment operating at frequencies up to 30MHz.
Key electrical characteristics include a minimum DC current gain (hFE) of 10 at 5.0A and 5.0V, and a minimum common-emitter power gain (Gpe) of 13dB at 12.5V, 60W output, and 30MHz. The transistor is rated for a maximum collector current (IC) of 15A and a collector-emitter voltage (VCEO) of 18V. It can handle a total device dissipation (PD) of 175W at 25°C case temperature.
Designed for RF power output, the NTE334 achieves an output power of 60 Watts with a minimum efficiency of 55% under specified test conditions (12.5V, 30MHz). Absolute maximum ratings include a collector-emitter voltage (VCES) of 36V and an emitter-base voltage (VEBO) of 4V. The storage temperature range is from -65°C to +150°C.
Note: The NTE334 is a discontinued device and no longer available.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current (IC) for the NTE334 is 15A.
The collector-emitter breakdown voltage (VCEO) for the NTE334 is a minimum of 18V.
The minimum DC current gain (hFE) for the NTE334 is 10, tested at 5.0A collector current and 5.0V collector-emitter voltage.
The NTE334 is specified for an output power of 60 Watts at 12.5V and 30MHz.
The storage temperature range for the NTE334 is -65°C to +150°C.
The RoHS status for the NTE334 is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NTE334 is 1 Unlimited.