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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The NTE Electronics NTE332 is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a TO-220 package and designed for through-hole mounting.
This transistor offers a maximum collector-emitter voltage of 100V and can handle a continuous collector current of up to 15A. It has a power dissipation rating of 90W and a transition frequency (fT) of 3MHz. The DC current gain (hFE) is a minimum of 40 at 500mA and 4V, with a Vce saturation of 3V maximum at 2.5A and 10A.
The operating temperature range for the NTE332 is up to 150°C (TJ). Its through-hole mounting type makes it suitable for traditional PCB assembly.
This component is part of the single bipolar junction transistor category, offering a robust solution for amplification and switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 100V.
The NTE332 has a continuous collector current rating of 15A.
The power dissipation for the NTE332 is 90W.
The operating temperature range is up to 150°C (TJ).
The NTE332 is designed for through-hole mounting.
The NTE332 is supplied in a TO-220-3 package.