| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The NTE320F is a Silicon NPN RF Power Transistor manufactured by NTE Electronics. It is specifically designed for 12.5V VHF large-signal amplifier applications, suitable for commercial and industrial equipment operating up to 300MHz.
Key electrical characteristics include an output power of 40W at 175MHz, a minimum gain of 4.5dB, and an efficiency of 70%. The transistor has an absolute maximum collector-emitter voltage (VCEO) of 18V and a continuous collector current (IC) of 7A. The total device dissipation (PD) is rated at 80W at 25°C.
This component is available in a W52K flange mount package style. It is designed for RF operation, and its total device dissipation rating applies when operated as an RF amplifier.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE320F delivers 40W output with minimum gain of 4.5dB at 175MHz.
The maximum continuous collector current is 7A.
The collector-emitter breakdown voltage is minimum 18V.
It comes in an SOT-123 flange-mount package.
The storage temperature range is -65°C to +200°C.
Maximum total device dissipation is 80W at 25°C case temperature.
The minimum DC current gain is 5 at IC=1A, VCE=5V.