| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Gain | |
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| Noise Figure (dB Typ @ f) | |
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| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Voltage |
The NTE Electronics NTE319 is an NPN silicon RF transistor suitable for VHF amplification applications. It is rated for a maximum operating voltage of 20V and a junction temperature of 175°C.
Key electrical characteristics include a DC current gain (hFE) of 20 minimum at 2mA and 10V, a noise figure of 2.7dB typical at 45MHz, and a gain of 29dB. The transistor has a power dissipation rating of 175mW.
This component is housed in a TO-72 package and features a through-hole mounting type. It is classified under the Transistors - Bipolar (BJT) - RF category, making it suitable for various radio frequency circuit designs.
The NTE319 is identified by its manufacturer part number NTE319 and has a DK part number of 2368-NTE319-ND.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE319 transistor has a maximum operating voltage of 20V.
The noise figure of the NTE319 transistor is typically 2.7dB at 45MHz.
The NTE319 transistor has a gain of 29dB.
The NTE319 transistor is supplied in a TO-72 package.
The NTE319 transistor can operate at a junction temperature of up to 175°C.