NTE316 The NTE316 is an NPN RF transistor from NTE Electronics, designed for high gain and low noise applications. It operates at up to 15V and 50mA with a frequency of 1.4GHz.
Mfr Part #:

NTE316

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
The NTE316 is an NPN RF transistor from NTE Electronics, designed for high gain and low noise applications. It operates at up to 15V and 50mA with a frequency of 1.4GHz.
Total Stock: 6 pcs
$ Price Range: $0.99

NTE316 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6 pcs
6 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

NTE316 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Power
Supplier Device Package
Transistor Type
Voltage

NTE316 Description

Short technical summary and product information.

The NTE316 is a silicon NPN transistor from NTE Electronics, specifically designed as a high-gain, low-noise RF amplifier. It features a high current gain-bandwidth product, low noise figure, and high power gain, making it suitable for RF applications.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 15V, a collector current (IC) of 50mA, and a current gain-bandwidth product (fT) of 1400MHz at 100MHz. The DC current gain (hFE) ranges from 25 to 250 at 2mA and 5V. The noise figure is typically 4.5dB at 450MHz, and the power gain is a minimum of 15dB at 450MHz.

 

This transistor is housed in a TO-72 metal can package and is designed for through-hole mounting. Absolute maximum ratings include a collector-base voltage (VCBO) of 30V and an emitter-base voltage (VEBO) of 3V. The device can dissipate up to 200mW at 25°C and can be derated at 1.14mW/°C above that temperature. Storage temperature range is -65°C to +200°C.

NTE316 Quick Information

Product Type: NPN Transistor
Canonical Name: NTE Electronics NTE316 Silicon NPN Transistor
Subcategory: RF Transistor

NTE316 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE316 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE316 Features

  • High current gain-bandwidth product.
  • Low noise figure for sensitive applications.
  • High power gain for amplification.
  • NPN silicon transistor.
  • TO-72 metal can package.

NTE316 Applications

  • Suitable for RF amplification applications.
  • Used in high-frequency communication circuits.
  • Ideal for low-noise RF signal processing.
  • Applicable in microwave and radio frequency systems.
  • Suitable for high-speed switching in RF circuits.

NTE316 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NTE316 transistor?

The NTE316 transistor has a maximum collector-emitter voltage (VCEO) of 15V.

What is the continuous collector current rating for the NTE316?

The NTE316 transistor has a continuous collector current (IC) rating of 50mA.

What is the gain-bandwidth product of the NTE316 transistor?

The NTE316 transistor has a current gain-bandwidth product (fT) of 1400MHz at 100MHz.

What is the typical noise figure for the NTE316 transistor?

The NTE316 transistor has a typical noise figure of 4.5dB at 450MHz.

What package type is the NTE316 transistor supplied in?

The NTE316 transistor is supplied in a TO-72 metal can package.

How is the NTE316 transistor mounted?

The NTE316 transistor is designed for through-hole mounting.

Home
Account

Categories