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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE Electronics NTE315 is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It features a collector-emitter breakdown voltage of 50V and can handle a maximum collector current of 1A. The transistor has a Vce saturation voltage of 300mV at 50mA collector current and 1A collector current, with a minimum DC current gain (hFE) of 199 at 100mA collector current and 2V collector-emitter voltage.
With a maximum power dissipation of 750mW, the NTE315 is designed for through-hole mounting in a TO-92L package (also referred to as TO-226-3, TO-92-3 Long Body). It operates at temperatures up to 120°C (TJ). This component is specified as RoHS3 Compliant, MSL 1 Unlimited, and REACH Unaffected, though these compliance statuses are unverified.
This transistor is a reliable choice for general-purpose amplification and switching applications where its specific electrical characteristics and package type are suitable. Its through-hole mounting makes it easy to integrate into breadboard prototypes or permanent PCB designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the NTE315 transistor is 1 A.
The collector-emitter breakdown voltage (Vceo) for the NTE315 is 50 V.
The maximum power dissipation for the NTE315 transistor is 750 mW.
The operating temperature for the NTE315 transistor is up to 120°C (TJ).
The NTE315 transistor is in a TO-226-3, TO-92-3 Long Body package, also referred to as TO-92L.