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NTE3122 The NTE3122 is a silicon NPN phototransistor from NTE Electronics, designed for applications requiring light detection. It features a narrow acceptance angle and high sensitivity.
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NTE3122

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
The NTE3122 is a silicon NPN phototransistor from NTE Electronics, designed for applications requiring light detection. It features a narrow acceptance angle and high sensitivity.
✓ Total Stock: 3 pcs
$ Price Range: $0.99

NTE3122 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
3 pcs
On Request
3 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NTE3122 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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NTE3122 Description

Short technical summary and product information.

The NTE3122 is a silicon NPN phototransistor from NTE Electronics, characterized by its narrow acceptance angle and high sensitivity. It is designed for applications such as VCRs, cassette tape recorders, floppy disk drives, optoelectronic switches, and automatic stroboscopes.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 35V, a maximum collector current (IC) of 50mA, and a peak emission wavelength of 860nm. The device operates within a temperature range of -25°C to +85°C.

 

This phototransistor is housed in an epoxy resin package with a through-hole mounting type and radial leads. The response time for rise is a maximum of 80µs, and for fall is 70µs. Its high sensitivity is demonstrated by an IC of 1.5mA minimum at an irradiance of 0.1mW/cm².

NTE3122 Quick Information

Product Type: Phototransistor
Canonical Name: NTE3122 Phototransistor
Subcategory: Single Bipolar Junction Transistors

NTE3122 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE3122 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE3122 Features

  • Silicon NPN phototransistor with high sensitivity.
  • Narrow acceptance angle of ±13° typical.
  • Collector-Emitter Voltage (VCEO) up to 35V.
  • Peak emission wavelength at 860nm.
  • Through-hole mounting in epoxy resin package.

NTE3122 Applications

  • Ideal for infrared detection and sensing.
  • Used in photoelectric switches and light barriers.
  • Suitable for optical encoders and position sensors.
  • Can be used in remote control receivers.
  • Application in automatic lighting control systems.

NTE3122 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the NTE3122?

The maximum collector-emitter voltage is 35V.

What is the operating temperature range of the NTE3122?

The operating temperature range is -25°C to +85°C.

What is the package type of the NTE3122?

The NTE3122 comes in a radial through-hole package with two leads.

What is the peak wavelength of the NTE3122?

The peak wavelength is 860nm.

What is the maximum collector current of the NTE3122?

The maximum collector current is 50mA.

What is the response time of the NTE3122?

The rise time is 80µs and the fall time is 70µs at VCE=2V, IC=10mA, RL=100Ω.

What is the collector dark current of the NTE3122?

The maximum collector dark current is 10µA at VCE=10V.

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