| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
This NTE Electronics NTE306 is a single NPN bipolar junction transistor (BJT) housed in a TO-202 package with a long tab. It is designed for through-hole mounting and features a maximum collector-emitter voltage rating of 50V and a continuous collector current capability of 1.5A.
The transistor exhibits a minimum DC current gain (hFE) of 98 at 100mA and 2V. Its Vce saturation is a maximum of 300mV at 1A collector current and 50mA base current. The device operates within a temperature range of -50°C to 150°C (TJ) and has a power dissipation of 950mW.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating for the NTE306 is 50V.
The NTE306 can handle a maximum continuous collector current of 1.5A.
The NTE306 is a through-hole mounted transistor.
The operating temperature range for the NTE306 is -50°C to 150°C (TJ).