| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE Electronics NTE30 is a high-power PNP silicon transistor suitable for demanding switching applications. It features a maximum continuous collector current (Ic) of 50A and a collector-emitter voltage (Vce) of 80V.
With a power dissipation rating of 300W, this transistor is built to handle significant thermal loads. It operates within a temperature range of -65°C to 200°C (TJ), ensuring reliability in various environments. The DC current gain (hFE) is a minimum of 15 at 25A and 2V, with a Vce saturation of 5V maximum at 10A and 50A.
Packaged in a TO-204AA, TO-3 case, the NTE30 is designed for through-hole mounting. Its transition frequency is 2MHz, making it suitable for a range of power control circuits. This component is compliant with RoHS3 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE30 transistor has a maximum continuous current rating of 50A.
The operating temperature range for the NTE30 transistor is -65°C to 200°C (TJ).
The NTE30 transistor is supplied in a TO-204AA, TO-3 package.
The NTE30 transistor is RoHS3 Compliant.