LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2970 is an N-Channel, Enhancement Mode MOSFET manufactured by NTE Electronics. This high-speed switch is designed for applications such as Switch Mode Power Supplies (SMPS) and Uninterruptable Power Supplies (UPS).
Key electrical specifications include a maximum drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 22A at 25°C (14A at 100°C) with a gate-source voltage (VGS) of 10V. It also offers a pulsed drain current (IDM) of 88A and features low gate charge for simple drive requirements.
The device is housed in a TO-247 type package, suitable for through-hole mounting. Thermal characteristics include a maximum junction-to-case thermal resistance (RthJC) of 0.45°C/W and a total power dissipation (PD) of 277W at 25°C.
This MOSFET is characterized by improved gate, avalanche, and dynamic dV/dt ruggedness, along with fully characterized capacitance and avalanche voltage and current.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the NTE2970 is 500V.
The continuous drain current (ID) for the NTE2970 is 22A at 25°C with a VGS of 10V.
The NTE2970 MOSFET is in a TO-247 type package.
The operating junction temperature range for the NTE2970 is -55°C to +150°C.
Typical applications include Switch Mode Power Supply (SMPS), Uninterruptable Power Supply (UPS), and High Speed Power Switching.
