| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2955 is an N-Channel, Enhancement Mode MOSFET manufactured by NTE Electronics. It is designed for high-speed switching applications, such as in CRT display monitors.
Key electrical specifications include a Drain-Source Breakdown Voltage of 250V and a continuous Drain Current of 10A. The device can handle pulsed drain currents up to 30A and has a Maximum Power Dissipation of 32W. Its Gate-Source Voltage range is ±20V, with a Gate Threshold Voltage typically between 2.0V and 4.0V.
The MOSFET exhibits a low Static Drain-Source ON Resistance, ranging from 0.40 to 0.52 Ohms at 10V VGS and 5A ID. Switching characteristics are also notable, with a Turn-On Delay Time of 20ns and a Turn-Off Delay Time of 150ns.
Operating temperature ranges from -55°C to +150°C. The component is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage is 250V.
The continuous Drain Current is 10A.
The maximum power dissipation is 32W.
The operating temperature range is -55°C to +150°C.
The Gate Threshold Voltage is typically between 2.0V and 4.0V.
The Static Drain-Source ON Resistance is between 0.40 and 0.52 Ohms.
The typical input capacitance is 950pF.