| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The NTE295 is an NPN RF bipolar transistor manufactured by NTE Electronics. It is suitable for RF power output and driver applications.
Key electrical specifications include a collector-emitter voltage (VCEO) of 45V, a continuous collector current (IC) of 1A, and a maximum frequency of 250MHz. The DC current gain (hFE) is a minimum of 60 at 500mA and 5V. The transistor can dissipate up to 750mW of power and operates at a junction temperature up to 150°C.
This transistor comes in a TO-126 package and is designed for through-hole mounting. Its absolute maximum ratings include a collector-base voltage (VCBO) of 75V and a collector-emitter voltage (VCER) of 75V with RBE at 150 Ohms. The emitter-base voltage (VEBO) is rated at 5V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the NTE295 transistor is 45V.
The maximum continuous collector current (IC) for the NTE295 is 1A.
The NTE295 RF transistor operates at a frequency of 250MHz.
The DC current gain (hFE) of the NTE295 is a minimum of 60 at 500mA and 5V.
The NTE295 transistor is available in a TO-126 package.
The NTE295 transistor is designed for through-hole mounting.
The NTE295 has a power dissipation rating of 750mW.