| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Storage Temperature |
The NTE2943 is an N-Channel, Enhancement Mode MOSFET manufactured by NTE Electronics. This component is designed for high-speed switching applications and offers features such as low static drain-source ON resistance, improved inductive ruggedness, and fast switching times.
Key electrical specifications include a maximum drain-source voltage (VDSS) of 100V and a continuous drain current (ID) of 17A at 25°C. The gate threshold voltage (VGS(th)) ranges from 2.0V to 4.0V. The device exhibits a low static drain-source ON resistance (RDS(on)) of 0.077Ω at 14A and 10V gate drive.
This MOSFET is housed in a TO220 Full Pack isolated package, suitable for through-hole mounting. The operating junction temperature range is -55°C to +150°C, with a total power dissipation of 40W at 25°C. Thermal resistance from junction-to-case (RthJC) is 3.12 K/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The NTE2943 comes in a TO220 Full Pack package.
The operating junction temperature range is -55°C to +150°C.
The gate threshold voltage ranges from 2.0V to 4.0V.
The continuous drain current is 17A at 25°C case temperature.
The maximum static drain-source on-resistance is 0.077Ω at VGS=10V, ID=14A.
The maximum junction-to-case thermal resistance is 3.12 K/W.