NTE2922 The NTE2922 is an N-channel MOSFET from NTE Electronics designed for high-speed switching applications. It offers a 400V breakdown voltage and a 16A continuous drain current.
Mfr Part #:

NTE2922

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
The NTE2922 is an N-channel MOSFET from NTE Electronics designed for high-speed switching applications. It offers a 400V breakdown voltage and a 16A continuous drain current.
Total Stock: 2 pcs
$ Price Range: $0.99

NTE2922 Available from 1 distributor

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NTE2922 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTE2922 Description

Short technical summary and product information.

The NTE2922 is an N-channel MOSFET from NTE Electronics, designed for high-speed switching applications. It features a 400V drain-to-source breakdown voltage and a continuous drain current of 16A at 25°C case temperature, derating to 10A at 100°C.

 

Key electrical characteristics include a low static drain-to-source on-resistance of 300mOhm at 8.9A and 10V gate-to-source voltage, and a gate threshold voltage of up to 4V. The device supports a gate-to-source voltage range of ±20V and has an input capacitance of 2600pF.

 

With a power dissipation rating of 190W at 25°C, the NTE2922 is suitable for demanding applications. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-3P package, designed for through-hole mounting.

 

The MOSFET is rated for a peak diode recovery dv/dt of 4V/ns and features dynamic dv/dt rating and repetitive avalanche rating, making it robust for various switching circuits.

NTE2922 Quick Information

Product Type: MOSFET
Canonical Name: NTE2922 N-Channel MOSFET
Subcategory: N-Channel

NTE2922 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE2922 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE2922 Features

  • 400V drain-to-source breakdown voltage.
  • 16A continuous drain current.
  • 300mOhm maximum Rds On.
  • TO-3P package for through-hole mounting.
  • Wide operating temperature range.

NTE2922 Applications

  • High-speed switching applications.
  • Power supply circuits.
  • Motor control applications.
  • General purpose power switching.

NTE2922 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTE2922 MOSFET?

The maximum drain-to-source voltage (Vdss) for the NTE2922 MOSFET is 400V.

What is the continuous drain current rating of the NTE2922 MOSFET?

The NTE2922 MOSFET has a continuous drain current rating of 16A at a case temperature of 25°C.

What is the typical on-resistance (Rds On) for the NTE2922 MOSFET?

The typical static drain-to-source on-resistance (Rds On) for the NTE2922 MOSFET is 0.30 Ohms at 9.6A and 10V.

What is the operating temperature range for the NTE2922 MOSFET?

The NTE2922 MOSFET can operate within a junction temperature range of -55°C to +150°C.

What package type is the NTE2922 MOSFET supplied in?

The NTE2922 MOSFET is supplied in a TO-3P package.

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