| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTE Electronics NTE2920 is a robust N-channel power MOSFET designed for demanding applications. It offers a 60V drain-to-source voltage (Vdss) and can handle a continuous drain current (Id) of up to 70A at the case temperature.
Key electrical characteristics include a low on-state resistance (Rds On) of 14mOhm at 54A and 10V, and a gate charge (Qg) of 160nC at 10V. The MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 230W (Tc).
Packaged in a TO-3P case, this component is suitable for through-hole mounting. The NTE2920 is specified with a gate threshold voltage (Vgs(th)) of 4V at 250µA and a maximum gate-source voltage (Vgs) of ±20V. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor principles.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NTE2920 is 60V.
The NTE2920 has a continuous drain current (Id) rating of 70A at the case temperature.
The NTE2920 is supplied in a TO-3P package.
The operating temperature range for the NTE2920 is -55°C to 175°C (TJ).
The Rds On (Max) for the NTE2920 is 14mOhm at 54A and 10V.