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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE29 is a high-power, high-current NPN bipolar junction transistor (BJT) manufactured by NTE Electronics. It is designed for switching applications and offers robust performance with a collector-emitter voltage rating of 80V and a continuous collector current capability of 50A.
This transistor can dissipate up to 300W of power, making it suitable for demanding applications. It features a DC current gain (hFE) of at least 15 at 25A and 2V, with a Vce saturation of 5V maximum at 10A and 50A. The operating frequency reaches up to 2MHz.
Packaged in the industry-standard TO-3 (TO-204AA) case, the NTE29 is designed for through-hole mounting, facilitating integration into various electronic circuits. Its operating temperature range extends from -65°C to 200°C (TJ), providing reliability in diverse environmental conditions.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating for the NTE29 transistor is 80V.
The NTE29 transistor can handle a continuous collector current of 50A.
The NTE29 transistor has a power dissipation rating of 300W.
The NTE29 transistor is supplied in a TO-3 (TO-204AA) package.
The NTE29 transistor is designed for through-hole mounting.
The NTE29 transistor operates within a temperature range of -65°C to 200°C (TJ).