| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE283 is a silicon NPN transistor housed in a TO-3 package, designed for high-voltage, high-speed power switching applications, particularly in inductive circuits where fall time is critical. Its key electrical characteristics include a collector-emitter voltage of 325V (VCEO) and a continuous collector current of 10A.
This transistor is suitable for applications such as switching regulators, PWM inverters, and solenoid or relay drivers. It offers a maximum power dissipation of 100W at 25°C and an operating junction temperature up to 200°C. The device has a DC current gain (hFE) of at least 15 at 2.5A and 10V, with a gain-bandwidth product of 10MHz.
The NTE283 is mounted via through-hole. Its TO-3 package is designed for power applications requiring efficient heat dissipation. The operating temperature range extends up to 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE283 transistor is 325V.
The NTE283 has a continuous collector current rating of 10A.
The NTE283 transistor has a maximum power dissipation of 100W.
The operating junction temperature for the NTE283 transistor can reach up to 200°C.
The NTE283 transistor is supplied in a TO-204AA, TO-3 package.