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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE281 is a PNP bipolar junction transistor (BJT) manufactured by NTE Electronics. This component is designed for power applications, featuring a high collector-emitter breakdown voltage of 140V and a substantial continuous current capability of 12A. It can dissipate up to 100W of power.
The transistor is housed in a TO-3 (TO-204AA) metal can package, suitable for through-hole mounting. Its DC current gain (hFE) is a minimum of 40 at 2A collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 3V at 700mA base current and 7A collector current. With an operating frequency of 5MHz, it is suitable for various power switching and amplification tasks.
This device operates at a maximum junction temperature of 150°C. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited, indicating it is not sensitive to moisture under normal conditions. The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE281 transistor has a maximum operating voltage of 140 V.
The NTE281 transistor can handle a continuous current of 12 A.
The NTE281 transistor has a power dissipation capability of 100 W.
The NTE281 transistor operates at a maximum junction temperature of 150°C.
The NTE281 transistor is supplied in a TO-3 (TO-204AA) package.
The NTE281 transistor is designed for through-hole mounting.