| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE Electronics NTE280MP is a silicon NPN bipolar junction transistor (BJT) designed for high power, high fidelity audio frequency amplifier applications. It comes in a TO-3 package, also known as TO-204AA.
Key electrical characteristics include a Collector-Emitter Breakdown Voltage of 140V and a maximum Collector Current of 12A. The device offers a high power dissipation capability of 100W at 25°C case temperature. Its DC Current Gain (hFE) ranges from 40 to 140 at 2A and 5V.
The transistor operates at junction temperatures up to 150°C and has a storage temperature range of -65°C to +150°C. The frequency response is characterized by a current-gain bandwidth product (fT) of 5MHz.
This component is suitable for through-hole mounting. Its robust design makes it a reliable choice for demanding audio amplification circuits where power and fidelity are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE280MP is 140V.
The NTE280MP can handle a maximum continuous collector current (IC) of 12A.
The NTE280MP has a power dissipation rating of 100W at 25°C case temperature.
The DC current gain (hFE) for the NTE280MP ranges from 40 to 140 under test conditions of 2A collector current and 5V collector-emitter voltage.
The NTE280MP is an NPN bipolar junction transistor (BJT).
The NTE280MP is supplied in a TO-3 package.
The operating junction temperature for the NTE280MP is up to 150°C, with a storage temperature range of -65°C to +150°C.