| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NTE275 transistor from NTE Electronics is a PNP Darlington type, suitable for through-hole mounting. It features a maximum current rating of 4A and a voltage rating of 80V, with a power dissipation of 50W. The device operates within a temperature range of -65°C to 200°C (TJ).
Key electrical characteristics include a minimum DC current gain (hFE) of 750 at 2A and 3V, and a Vce saturation of 3V maximum at 40mA and 4A. The transistor is housed in a TO-66 package, also referred to as TO-213AA or TO-66-2.
This component is identified by part number NE-NTE275 and is part of the Transistors - Bipolar (BJT) - Single category. Its robust specifications make it suitable for various power switching and amplification applications where high gain is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE275 transistor has a voltage rating of 80V.
The NTE275 transistor can handle a maximum current of 4A.
The NTE275 transistor has a power dissipation of 50W.
The NTE275 transistor operates within a temperature range of -65°C to 200°C (TJ).
The NTE275 transistor is supplied in a TO-66 package.
The NTE275 transistor is designed for through-hole mounting.