| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE271 is a silicon PNP Darlington power transistor housed in a TO-3PN package. It is suitable for general purpose amplifier and low frequency switching applications.
Key electrical specifications include a Collector-Emitter Sustaining Voltage (VCEO(sus)) of 100V, a continuous Collector Current (IC) of 10A, and a Peak Collector Current of 15A. It features a high DC Current Gain (hFE) of 1000 minimum at 5A and 4V.
The device has a maximum power dissipation of 125W at 25°C case temperature. It operates within a junction temperature range of -65°C to +150°C and has a low thermal resistance from junction to case of 1.0°C/W.
Mounting is through hole. The transistor type is PNP Darlington, and it comes in a TO-3P-3, SC-65-3 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Sustaining Voltage (VCEO(sus)) for the NTE271 is a minimum of 100V.
The NTE271 transistor can handle a maximum continuous collector current of 10A.
The DC Current Gain (hFE) for the NTE271 is a minimum of 1000 when tested at 5A collector current and 4V collector-emitter voltage.
The NTE271 transistor operates within a temperature range of -65°C to +150°C (TJ).
The NTE271 transistor is supplied in a TO-3PN package, also referred to as TO-3P-3, SC-65-3.
The NTE271 transistor is designed for through-hole mounting.