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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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This NTE Electronics NTE269 is a single PNP Darlington bipolar junction transistor (BJT) suitable for various electronic applications. It features a high DC current gain (hFE) of 10000 at 200mA and 5V, with a maximum Vce saturation of 1.5V at 3mA and 1.5A. The transistor is rated for a continuous collector current of 2A and a breakdown voltage of 50V.
Designed for through-hole mounting, the NTE269 comes in a TO-202 package with long tabs. It operates across a wide temperature range from -55°C to 150°C (TJ), with a power dissipation of 1.67W. The component is specified as RoHS3 Compliant, with an MSL of 1 Unlimited and REACH Unaffected status, though these compliance details are unverified.
This component is ideal for applications requiring high current gain and switching capabilities. Its robust construction and operating temperature range make it suitable for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE269 transistor has a voltage rating of 50V.
The NTE269 transistor can handle a continuous collector current of 2A.
The NTE269 has a minimum DC current gain (hFE) of 10000 at 200mA and 5V.
The operating temperature range for the NTE269 is -55°C to 150°C (TJ).
The NTE269 transistor is supplied in a TO-202 package with long tabs.