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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The NTE267 is an NPN Silicon Darlington Transistor manufactured by NTE Electronics. This component is designed for power amplification and switching applications.
Key electrical characteristics include a maximum voltage rating of 30V and a continuous current capability of 500mA. It features a high DC current gain (hFE) of 90000 at 200mA and 5V, with a Vce saturation of 1.5V at 500µA and 500mA. The transistor operates at a frequency up to 75MHz and has a power dissipation rating of 6.25W.
Packaged in a TO-202 Long Tab configuration, the NTE267 is designed for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ).
This transistor is suitable for various electronic circuits requiring amplification or switching functions where its specific voltage, current, and gain characteristics are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE267 transistor has a maximum operating voltage of 30V.
The NTE267 transistor is supplied in a TO-202 Long Tab package.
The operating temperature range for the NTE267 transistor is -55°C to 150°C (TJ).
The NTE267 transistor is stated as RoHS3 Compliant.