NTE266 The NTE Electronics NTE266 is an NPN Darlington transistor designed for general-purpose applications. It offers a 50V collector-emitter breakdown voltage and a 500mA continuous collector current.
Mfr Part #:

NTE266

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
The NTE Electronics NTE266 is an NPN Darlington transistor designed for general-purpose applications. It offers a 50V collector-emitter breakdown voltage and a 500mA continuous collector current.
Total Stock: 4 pcs
$ Price Range: $0.99

NTE266 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4 pcs
4 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

NTE266 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Frequency - Transition
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NTE266 Description

Short technical summary and product information.

The NTE Electronics NTE266 is a single NPN Darlington bipolar junction transistor (BJT) housed in a TO-202 package. This component is designed for applications requiring high current gain, featuring a minimum DC current gain (hFE) of 40000 at 200mA and 5V.

 

Key electrical specifications include a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 500mA. The transistor has a transition frequency of 75MHz and a maximum power dissipation of 1.33W. Its Vce saturation is rated at a maximum of 1.5V at 500μA base current and 500mA collector current.

 

The operating temperature range for the NTE266 is from -55°C to 150°C (TJ). It is mounted via a through-hole method. The component is supplied in a bag package.

 

This transistor is suitable for various switching and amplification tasks where high gain is beneficial. Its robust operating temperature range and standard TO-202 package make it a versatile choice for many electronic designs.

NTE266 Quick Information

Product Type: NPN Darlington Transistor
Canonical Name: NTE Electronics NTE266 NPN Darlington Transistor
Subcategory: Bipolar (BJT) - Single

NTE266 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE266 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE266 Features

  • NPN Darlington transistor type.
  • 50V collector-emitter breakdown voltage.
  • 500mA maximum collector current.
  • High DC current gain of 40000.
  • Operates from -55°C to 150°C.

NTE266 Applications

  • Suitable for high gain amplification.
  • Used in general purpose switching.
  • Ideal for low frequency circuits.
  • Applications requiring high current gain.

NTE266 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the NTE266 transistor?

The operating temperature range is -55°C to 150°C (TJ).

What is the package type for the NTE266 transistor?

The NTE266 transistor is supplied in a TO-202 Long Tab package.

What is the minimum DC current gain (hFE) of the NTE266 transistor?

The minimum DC current gain (hFE) is 40000 at 200mA and 5V.

What is the maximum collector current for the NTE266 transistor?

The maximum continuous collector current is 500 mA.

What is the collector-emitter breakdown voltage of the NTE266 transistor?

The collector-emitter breakdown voltage is 50 V.

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