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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Cutoff Current (Max) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE Electronics NTE2647 is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 230V and a maximum collector current of 1A.
Key electrical characteristics include a Vce saturation of 1.5V at 50mA/500mA and a minimum DC current gain (hFE) of 100 at 100mA/5V. The transistor has a transition frequency of 70MHz and a maximum power dissipation of 2W. It operates at temperatures up to 150°C (TJ).
This component is housed in a TO-220 Full Pack package and is designed for through-hole mounting. Its specifications make it suitable for amplification and switching circuits where PNP characteristics are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the NTE2647 is 1 A.
The collector-emitter breakdown voltage (Vceo) for the NTE2647 is 230 V.
The NTE2647 has a maximum power dissipation of 2 W.
The NTE2647 can operate at temperatures up to 150°C (TJ).
The NTE2647 is designed for through-hole mounting.