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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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This NPN bipolar junction transistor, part number NTE2646 from NTE Electronics, is designed for through-hole mounting in the TO-204AA (TO-3) package. It offers a maximum collector-emitter voltage of 65V and a continuous collector current of 100mA. The transistor has a power dissipation rating of 200mW and a frequency response up to 100MHz.
Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 600mV at 5mA base current and 10mA collector current. The operating temperature range extends up to 150°C (TJ).
This component is suitable for various general-purpose amplification and switching applications where through-hole mounting is required. Its specifications make it a reliable choice for designs needing moderate voltage and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the NTE2646 is 65V.
The NTE2646 has a continuous collector current rating of 100mA.
The NTE2646 is supplied in a TO-204AA (TO-3) package.
The NTE2646 transistor is designed for through-hole mounting.
The NTE2646 can operate at junction temperatures up to 150°C.