| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE Electronics NTE2645 is a single PNP bipolar junction transistor (BJT) suitable for various electronic applications. It features a maximum collector-emitter voltage of 175V and a continuous collector current of 1A, with a power dissipation of 1W.
This transistor is designed for through-hole mounting and comes in a TO-39 package. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 50mA and 10V, and a maximum Vce saturation of 600mV at 5mA and 50mA.
Operating temperature ranges from -65°C to 200°C. The NTE2645 is specified with RoHS3 compliance, MSL 1, and REACH unaffected status, though these compliance details are unverified.
This component is ideal for general-purpose amplification and switching applications where its voltage and current ratings are suitable.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE2645 transistor has a voltage rating of 175V.
The NTE2645 transistor can handle a maximum continuous current of 1A.
The NTE2645 transistor has a power dissipation of 1W.
The operating temperature range for the NTE2645 is -65°C to 200°C.
The NTE2645 is available in a TO-39 package.
The NTE2645 transistor is designed for through-hole mounting.