| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE262 is a complementary silicon PNP Darlington power transistor housed in a TO-220 package. It is engineered for general-purpose amplifier and low-speed switching applications.
Key electrical characteristics include a collector-emitter sustaining voltage of 100V and a continuous collector current rating of 5A. The transistor offers a high DC current gain (hFE) of 2500 typically at 4A. It also features a low collector-emitter saturation voltage, rated at 2V maximum at 3A and 4V maximum at 5A.
With a power dissipation of 2W at 25°C ambient temperature, the NTE262 is suitable for various power amplification tasks. The operating and storage temperature range is from -65°C to 150°C.
This transistor utilizes monolithic construction with a built-in base-emitter shunt resistor. It is mounted via through-hole method, making it suitable for breadboarding and traditional PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO(sus)) for the NTE262 is a minimum of 100V at 100mA.
The NTE262 can handle a continuous collector current of up to 5A.
The NTE262 has a typical DC current gain (hFE) of 2500 at an IC of 4A.
The NTE262 transistor comes in a TO-220 package.
The NTE262 operates within a temperature range of -65°C to 150°C.
The NTE262 is listed as RoHS3 Compliant.