| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The NTE261 is a silicon NPN Darlington power transistor housed in a TO-220 package. It is designed for general-purpose amplifier and low-speed switching applications.
Key electrical characteristics include a collector-emitter sustaining voltage of 100V and a continuous collector current of 5A. The transistor offers a high DC current gain (hFE) of 2500 typically at 4A. Its low collector-emitter saturation voltage is 2V maximum at 3A and 4V maximum at 5A.
With a power dissipation rating of 2W at 25°C ambient temperature, and 65W at 25°C case temperature, the NTE261 is suitable for various power applications. The operating and storage temperature range is from -65°C to +150°C.
The transistor is mounted via through-hole method and comes in a TO-220-3 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.22 | $2.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO(sus)) is a minimum of 100V at 100mA.
The NTE261 can handle a continuous collector current of 5A.
The typical DC current gain (hFE) for the NTE261 at an IC of 4A is 2500.
The NTE261 has a power dissipation of 2W at 25°C ambient temperature.
The NTE261 operates between -65°C and 150°C (TJ).
The NTE261 is supplied in a TO-220 package.
The NTE261 is mounted using the through-hole method.