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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2597 is a high-performance NPN Silicon transistor from NTE Electronics, suitable for demanding high voltage and high current switching applications. This component features a maximum Collector-Emitter Voltage (Vcbo) of 1100V and a maximum Collector Current (Ic) of 12A, with a power dissipation rating of 65W at +25°C.
Designed for reliability, the NTE2597 has a minimum DC Current Gain (Hfe) of 10 and a typical transition frequency (fT) of 15MHz. Its fall time (tf) is a typical 0.3us, indicating fast switching capabilities.
The transistor is housed in a TO-3PM package, which is commonly used for power applications requiring effective heat dissipation. This component replaces the ECG2597 and is identified by its high voltage and high current switching capabilities.
Key electrical characteristics include a Vce0 of 800V and a Vebo of 7V. The NTE2597 is a robust choice for power supply circuits, inverters, and other applications where efficient and reliable switching is critical.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
12A.
65W at case temperature 25°C.
10.
15MHz.
0.3 microseconds.
TO-3PM.