| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present |
The NTE2590 is a Silicon NPN Transistor manufactured by NTE Electronics, suitable for high voltage amplification and switching applications. It features high breakdown voltage, high reliability, and low output capacitance, along with a wide ASO range.
Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 900V and a continuous Collector Current (IC) of 50mA, with a peak current capability of 150mA. The DC Current Gain (hFE) ranges from 20 to 120 at 2mA. The device has an Output Capacitance (Cob) of 2pF at 1MHz and a Gain-Bandwidth Product (fT) of 6MHz.
Thermal characteristics include a maximum Collector Power Dissipation (PC) of 1.2W and an operating junction temperature (TJ) up to 150°C. The storage temperature range is from -55°C to +150°C.
This transistor is designed for through-hole mounting. Its high voltage ratings make it suitable for power supply circuits, inverters, and other high-voltage applications where reliability is crucial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the NTE2590 is 900V.
The continuous Collector Current (IC) rating for the NTE2590 is 50mA.
The DC Current Gain (hFE) of the NTE2590 is between 20 and 120 at VCE = 5V and IC = 2mA.
The operating junction temperature (TJ) for the NTE2590 is up to 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
