| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE Electronics NTE2580 is a Silicon NPN Transistor characterized by its high voltage, high current switching capabilities. It features high breakdown voltage, ensuring reliability in demanding applications. The transistor also boasts a fast switching speed, making it suitable for applications requiring quick response times.
Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 400V and a continuous Collector Current (IC) of 7A. The DC Current Gain (hFE) ranges from 20 to 50 at VCE = 5V and IC = 800mA. It has a Collector Emitter Saturation Voltage (VCE(sat)) of 0.8V maximum at IC = 4A and IB = 800mA, and a Base Emitter Saturation Voltage (VBE(sat)) of 1.5V maximum under the same conditions.
With a power dissipation of 50W at TC = +25°C, the NTE2580 is designed for robust performance. The operating junction temperature can reach up to +150°C. The transistor is available in a through-hole mounting package, facilitating integration into various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V minimum.
400V minimum.
7A maximum.
50W maximum at case temperature (TC=25°C).
20 to 50 at VCE=5V, IC=800mA.
150°C.
-55°C to +150°C.