| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2577 is a PNP bipolar junction transistor (BJT) manufactured by NTE Electronics. This component is designed for general-purpose amplification and switching applications.
Key electrical characteristics include a maximum voltage rating of 180V and a continuous current capability of 2A, with a power dissipation of 20W. It features a DC current gain (hFE) of at least 60 at 700mA and 10V, and a Vce saturation of 1V maximum at 70mA and 700mA.
The transistor operates at frequencies up to 60MHz and has an operating junction temperature of 150°C. It is housed in a TO-220 package, requiring Through Hole mounting.
This device is suitable for various electronic circuits where a robust PNP transistor is needed. Its specifications make it a reliable choice for power control and signal amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE2577 transistor has a voltage rating of 180V.
The NTE2577 can handle a maximum continuous current of 2A.
The NTE2577 transistor has a power dissipation of 20W.
The operating temperature for the NTE2577 is 150°C (TJ).
The NTE2577 is available in a TO-220-3 package.
The NTE2577 transistor is mounted using the Through Hole method.