| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present |
The NTE2571 is a PNP silicon transistor manufactured by NTE Electronics, designed for high current switching applications. This component offers a Collector-Emitter Voltage (VCEO) of 80V and a continuous Collector Current (IC) of 7A, with a peak current capability of 12A.
Key electrical characteristics include a DC Current Gain (hFE) ranging from 100 to 280 at 2V VCE and 1A IC, and a low Collector-Emitter Saturation Voltage (VCE(sat)) of 0.5V at 5A IC and 10mA IB. The Gain-Bandwidth Product (fT) is 20MHz at 5V VCE and 1A IC.
This transistor is housed in a TO-220 package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to +150°C and has a storage temperature range of -55°C to +150°C. The NTE2571 is a complementary part to the NTE2570 NPN transistor.
With its robust current handling and voltage ratings, the NTE2571 is well-suited for various power switching circuits where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the NTE2571 is 80V.
The continuous collector current (IC) rating for the NTE2571 is 7A.
The typical DC Current Gain (hFE) of the NTE2571 at VCE = 2V and IC = 1A is between 100 and 280.
The Collector-Emitter Saturation Voltage (VCE(sat)) for the NTE2571 is 0.5V at IC = 5A and IB = 10mA.
The NTE2571 transistor is supplied in a TO-220 package.
The operating junction temperature (TJ) for the NTE2571 ranges up to +150°C.
