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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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This NTE2569 is a single PNP bipolar junction transistor (BJT) manufactured by NTE Electronics. It is designed for general-purpose power switching and amplification applications.
The transistor features a maximum collector-emitter voltage (Vce) of 60V and a continuous collector current (Ic) of 10A. Its DC current gain (hFE) is a minimum of 70 at 1A and 2V, with a saturation voltage (Vce(sat)) of 400mV maximum at 250mA and 5A.
With a power dissipation rating of 2W and an operating frequency up to 100MHz, the NTE2569 is suitable for various electronic circuits. It operates at temperatures up to 150°C (TJ).
The component is housed in a TO-220 package and designed for through-hole mounting, making it easy to integrate into circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE2569 transistor has a maximum collector-emitter voltage rating of 60V.
The NTE2569 can handle a maximum continuous collector current of 10A.
The NTE2569 transistor operates at temperatures up to 150°C (TJ).
The NTE2569 is available in a TO-220 package.
The NTE2569 is designed for through-hole mounting.