| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2552 is a single bipolar junction transistor (BJT) manufactured by NTE Electronics. This component is designed for general-purpose amplification and switching applications.
Key electrical characteristics include a maximum collector-emitter voltage (Vce) of 60V and a maximum collector current (Ic) of 10A. The device offers a power dissipation rating of 2.5W. Its DC current gain (hFE) ranges from a minimum of 5000 to a maximum of 20000, with a typical value of 10000.
The NTE2552 is housed in a TO3P package, suitable for through-hole mounting. This packaging is often used for power applications where heat dissipation is a consideration.
This transistor is suitable for use in power supply circuits, audio amplifiers, and other applications requiring a robust discrete semiconductor component.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) for the NTE2552 is 60V.
The NTE2552 transistor can handle a maximum collector current (Ic) of 10A.
The NTE2552 has a power dissipation rating of 2.5W.
The DC current gain (hFE) for the NTE2552 ranges from 5000 to 20000.
The NTE2552 is supplied in a TO3P package.
The NTE2552 is designed for through-hole mounting.