| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2550 is a single NPN Darlington bipolar junction transistor (BJT) manufactured by NTE Electronics. This component is designed for applications requiring high current gain and switching capabilities.
Key electrical specifications include a maximum collector current (Ic) of 10A and a collector-emitter breakdown voltage (Vce) of 400V. It features a high DC current gain (hFE) of 150 minimum at 7A and 2V, and a Vce saturation voltage of 1.5V maximum at 70mA and 7A. The transistor has a maximum power dissipation of 50W and a transition frequency (fT) of 10MHz.
Packaged in a standard TO-220-3 configuration, the NTE2550 is suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ).
This transistor is appropriate for various power switching and amplification circuits where high current handling and gain are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the NTE2550 is 10A.
The collector-emitter breakdown voltage of the NTE2550 is 400V.
The operating temperature range for the NTE2550 is 150°C (TJ).
The NTE2550 is supplied in a TO-220-3 package.
The NTE2550 is mounted using the through-hole method.