| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE255 is a silicon NPN transistor suitable for horizontal driver and amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 300V and a continuous collector current (IC) of 500mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 10 to 50 at 500mA and 10V, a collector-emitter saturation voltage (VCE(sat)) of up to 0.5V at 100mA and 10V, and a transition frequency (fT) of up to 300MHz at 50mA.
This transistor is housed in a TO-237AA package and is designed for through-hole mounting. It has a maximum operating junction temperature of 150°C. The power dissipation is rated at 850mW at 25°C ambient temperature and 2W when measured at the collector lead.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE255 is 300V.
The NTE255 can handle a maximum continuous collector current (IC) of 500mA.
The transition frequency (fT) of the NTE255 is up to 300MHz at 50mA.
The NTE255 is supplied in a TO-237AA package.
The maximum operating junction temperature (TJmax) for the NTE255 is 150°C.