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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE2545 is a single NPN Darlington bipolar junction transistor manufactured by NTE Electronics. It is designed for applications requiring high current gain, offering a minimum DC current gain (hFE) of 2000 at 2.5A and 2V.
This transistor has a maximum collector current rating of 5A and a collector-emitter voltage of 60V. The Vce saturation is specified at 900mV maximum when operating at 5mA base current and 2.5A collector current. Its power dissipation is rated at 1.75W, and it operates at frequencies up to 200MHz.
The NTE2545 is packaged in a TO-220-3 case and is designed for through-hole mounting. It has an operating junction temperature of up to 150°C. The component is listed with RoHS3 compliance and Moisture Sensitivity Level 1 (MSL 1 Unlimited) status.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE2545 transistor has a collector current rating of 5 A.
The NTE2545 transistor has a collector-emitter voltage of 60 V.
The minimum DC current gain (hFE) for the NTE2545 is 2000 at 2.5A collector current and 2V collector-emitter voltage.
The NTE2545 transistor can operate at junction temperatures up to 150°C.
The NTE2545 is available in a TO-220-3 package.
The NTE2545 transistor is designed for through-hole mounting.