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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vce Saturation (Max) @ Ib, Ic | |
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The NTE2542 is a PNP Darlington bipolar junction transistor (BJT) manufactured by NTE Electronics. This component is designed for applications requiring high current gain and power handling. It features a maximum voltage rating of 120V and can handle continuous currents up to 25A, with a power dissipation of 120W.
The transistor offers a high DC current gain (hFE) of 2000 at 12A and 4V, indicating significant amplification capabilities. The saturation voltage (Vce Sat) is a maximum of 1.8V at 24mA and 12A. It operates at temperatures up to 150°C (TJ).
Designed for through-hole mounting, the NTE2542 comes in a TO-3P package, also referred to as SC-65-3. This packaging is suitable for applications where robust thermal management and secure mounting are necessary. The component is listed with a RoHS3 Compliant status, MSL 1 Unlimited, and REACH Unaffected, though these compliance details are unverified.
This transistor is suitable for various power switching and amplification tasks in electronic circuits where high gain and current handling are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE2542 transistor has a voltage rating of 120V.
The NTE2542 can handle a maximum continuous current of 25A.
The power dissipation for the NTE2542 is 120W.
The NTE2542 has a minimum DC current gain (hFE) of 2000 at 12A and 4V.
The NTE2542 operates at temperatures up to 150°C (TJ).
The NTE2542 is designed for through-hole mounting.
The NTE2542 is supplied in a TO-3P package.