| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE254 is a silicon complementary PNP Darlington transistor housed in a TO126 type case. It is engineered for general-purpose amplifier and low-speed switching applications. This transistor features a high DC current gain, with a typical value of 2000 at IC = 2A. It is constructed monolithically with built-in base-emitter resistors to limit leakage multiplication.
Key electrical specifications include a collector-emitter breakdown voltage of 80V and a maximum collector current of 4A. The total power dissipation is rated at 40W at 25°C. The operating junction temperature range is from -65°C to +150°C.
The NTE254 is mounted via a through-hole method and comes in a TO-225AA, TO-126-3 package. Its robust design makes it suitable for various amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the NTE254 is 4A.
The collector-emitter breakdown voltage (VCEO) for the NTE254 is 80V.
The typical DC current gain (hFE) for the NTE254 is 2000 at IC = 2A.
The maximum power dissipation (PD) for the NTE254 is 40W at 25°C.
The operating junction temperature range for the NTE254 is -65°C to +150°C.
The NTE254 transistor is available in a TO-225AA, TO-126-3 package.
The NTE254 transistor is mounted using the through-hole method.