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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector-Base Voltage | |
| Current | |
| Current Collector Cutoff (Maximum @ VCE = 80 V, IB = 0) | |
| Current Collector Cutoff (Maximum @ VCE = 80 V, IE = 0, TC = +100 °C) | |
| Current Collector Cutoff (Maximum) | |
| Current Collector Max (Maximum) | |
| Current Gain DC (Minimum @ VCE = 3 V, IC = 4 A) | |
| Current Gain DC (Typical @ VCE = 3 V, IC = 1.5 A) | |
| Current Gain DC (Typical @ VCE = 3 V, IC = 2 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation Total (@ TC = 25 °C) | |
| Power Dissipation Total (Maximum) | |
| Storage Temperature | |
| Supplier Device Package | |
| Temperature Junction Operating | |
| Thermal Resistance - Junction to Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage Collector Emitter Breakdown (Maximum) | |
| Voltage Collector Emitter Breakdown (Minimum @ IC = 50 mA, IB = 0) | |
| Voltage On Base Emitter (Maximum @ VCE = 3 V, IC = 1.5 A) | |
| Voltage On Base Emitter (Maximum @ VCE = 3 V, IC = 2.0 A) | |
| Voltage On Base Emitter (Maximum @ VCE = 3 V, IC = 4.0 A) | |
| Voltage Saturation Collector Emitter (Maximum @ IC = 1.5 A, IB = 30 mA) | |
| Voltage Saturation Collector Emitter (Maximum @ IC = 2.0 A, IB = 40 mA) | |
| Voltage Saturation Collector Emitter (Maximum @ IC = 4.0 A, IB = 40 mA) |
The NTE254 is a silicon complementary PNP Darlington transistor housed in a TO126 type case. It is engineered for general-purpose amplifier and low-speed switching applications. This transistor features a high DC current gain, with a typical value of 2000 at IC = 2A. It is constructed monolithically with built-in base-emitter resistors to limit leakage multiplication.
Key electrical specifications include a collector-emitter breakdown voltage of 80V and a maximum collector current of 4A. The total power dissipation is rated at 40W at 25°C. The operating junction temperature range is from -65°C to +150°C.
The NTE254 is mounted via a through-hole method and comes in a TO-225AA, TO-126-3 package. Its robust design makes it suitable for various amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the NTE254 is 4A.
The collector-emitter breakdown voltage (VCEO) for the NTE254 is 80V.
The typical DC current gain (hFE) for the NTE254 is 2000 at IC = 2A.
The maximum power dissipation (PD) for the NTE254 is 40W at 25°C.
The operating junction temperature range for the NTE254 is -65°C to +150°C.
The NTE254 transistor is available in a TO-225AA, TO-126-3 package.
The NTE254 transistor is mounted using the through-hole method.