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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Frequency - Transition | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE Electronics NTE2539 is a single NPN bipolar junction transistor (BJT) designed for power switching and amplification applications. It features a high collector-emitter breakdown voltage of 400V and can handle a maximum collector current of 25A.
Key electrical characteristics include a maximum power dissipation of 2.5W and a typical DC current gain (hFE) of 15 at 3.2A and 5V. The saturation voltage (Vce Sat) is a maximum of 800mV at 3.2A and 16A, indicating efficient switching performance. The transition frequency is 20MHz.
This transistor is housed in a TO-3P package and is designed for through-hole mounting. It operates at temperatures up to 150°C (TJ). The NTE2539 is suitable for various power electronics designs where robust voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 400V.
The maximum continuous collector current is 25A.
The maximum power dissipation is 2.5W.
The operating temperature is up to 150°C (TJ).
It is mounted using the through-hole method.