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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Cutoff Current | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| ICBO (Maximum @ VCE = 80 V, IE = 0) | |
| ICBO (Maximum @ VCE = 80 V, IE = 0, TC = +100 °C) | |
| Mounting Type | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Total Power Dissipation | |
| Transistor Type | |
| V(BR)CEO (Minimum/Nominal @ IC = 50 mA, IB = 0) | |
| VBE(on) (Maximum @ VCE = 3 V, IC = 1.5 A) | |
| VBE(on) (Maximum @ VCE = 3 V, IC = 2.0 A) | |
| VBE(on) (Maximum @ VCE = 3 V, IC = 4.0 A) | |
| VCE(sat) (Maximum @ IC = 1.5 A, IB = 30 mA) | |
| VCE(sat) (Maximum @ IC = 2.0 A, IB = 40 mA) | |
| VCE(sat) (Maximum @ IC = 4.0 A, IB = 40 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum @ VCE = 3 V, IC = 4 A) | |
| hFE (Minimum/Typical @ VCE = 3 V, IC = 1.5 A) | |
| hFE (Minimum/Typical @ VCE = 3 V, IC = 2 A) | |
| hFE (Typical @ IC = 2 A) |
The NTE253 is a silicon complementary NPN Darlington transistor housed in a TO-126 type case. It is engineered for general-purpose amplifier and low-speed switching applications. This transistor boasts a high DC current gain, typically 2000 at an IC of 2A, and features monolithic construction with built-in base-emitter resistors to limit leakage multiplication.
Key electrical characteristics include a Collector-Emitter Breakdown Voltage (VCEO) of 80V and a continuous Collector Current (IC) of 4A. The Collector-Emitter Saturation Voltage (VCE(sat)) is rated at a maximum of 3.0V at 4A. The operating junction temperature range is from -65°C to +150°C, with a total power dissipation of 40W at 25°C case temperature.
The NTE253 is designed for through-hole mounting. Its robust construction and electrical specifications make it suitable for various amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE253 transistor has a maximum continuous collector current of 4A.
The collector-emitter breakdown voltage (VCEO) for the NTE253 is 80V.
The NTE253 transistor has a typical DC current gain (hFE) of 2000 at IC = 2A.
The operating junction temperature range for the NTE253 is -65°C to +150°C.
The NTE253 transistor is supplied in a TO-126 package.
The NTE253 transistor is designed for through-hole mounting.