| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE2528 is an NPN silicon transistor manufactured by NTE Electronics, designed as a high voltage switch. It features high voltage and high current capacity, along with fast switching times, making it suitable for demanding applications.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 160V and a continuous Collector Current (IC) of 1.5A. The device also boasts a DC Current Gain (hFE) ranging from 100 to 400 at 5V/100mA and a Gain-Bandwidth Product (fT) of 120 MHz at 10V/50mA. Saturation voltages are low, with VCE(sat) typically 0.13V at 500mA/50mA and VBE(sat) typically 0.85V under the same conditions.
Absolute maximum ratings specify a Collector Base Voltage (VCBO) of 180V and an Emitter Base Voltage (VEBO) of 6V. Power dissipation is rated at 1W at 25°C ambient temperature and 15W at 25°C case temperature. The operating junction temperature can reach up to 150°C, with storage temperatures ranging from -55°C to +150°C.
The NTE2528 comes in a TO-126N package, suitable for through-hole mounting. Its robust specifications make it a reliable choice for various electronic switching circuits requiring high voltage handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
180V
160V
1.5A
Maximum 150°C
TO-126N
100 to 400 at VCE=5V, IC=100mA
120 MHz