| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE2526 is an NPN silicon complementary transistor manufactured by NTE Electronics, designed for high current switching applications. It features a low collector-emitter saturation voltage, high current capability, and fast switching times, making it suitable for various electronic designs.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 4A. The DC current gain (hFE) ranges from 140 to 400 at 5V and 500mA. The transistor also boasts a gain-bandwidth product (fT) of 180 MHz at 10V and 500mA.
With a maximum power dissipation of 1W at 25°C ambient temperature and 20W at 25°C case temperature, the NTE2526 is built for robust performance. Its operating junction temperature can reach up to 150°C, and its storage temperature range is from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE2526 is 100V.
The NTE2526 has a continuous collector current (IC) rating of 4A.
The typical gain-bandwidth product (fT) for the NTE2526 is 180 MHz.
The maximum operating junction temperature (TJ) for the NTE2526 is 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.