| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE2524 is a high-performance NPN silicon complementary transistor from NTE Electronics, designed for demanding high current switching applications. It boasts a low collector-emitter saturation voltage, contributing to efficient power handling.
Key electrical characteristics include a continuous collector current of 8A and a pulse current capability of 12A. The transistor also features a high gain-bandwidth product (fT) of 180 MHz at 1A, indicating good high-frequency performance. Its excellent linearity of hFE ensures predictable operation across different current levels.
With a maximum collector power dissipation of 20W at 25°C case temperature, the NTE2524 is suitable for robust applications. The operating junction temperature range is up to 150°C, and storage temperatures range from -55°C to +150°C.
This transistor is well-suited for power supply circuits, motor control, and other applications requiring reliable high-current switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current (IC) for the NTE2524 is 8A.
The collector-emitter voltage rating (VCEO) for the NTE2524 is 50V.
The typical collector-emitter saturation voltage (VCE(sat)) for the NTE2524 is 200mV at IC = 4A and IB = 200mA.
The typical gain-bandwidth product (fT) for the NTE2524 is 180 MHz at VCE = 5V and IC = 1A.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NTE2524 is 1 Unlimited.